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Sheath width in negative-ion-containing plasmaSHINDO, H; HORIIKE, Y.Japanese journal of applied physics. 1993, Vol 32, Num 11A, pp 5109-5113, issn 0021-4922, 1Article

Electromigration characteristics of Cu-Al precipitate in AlCu interconnectionSHINGUBARA, S; NISHIDA, H; SAKAUE, H et al.Japanese journal of applied physics. 1994, Vol 33, Num 7A, pp 3860-3863, issn 0021-4922, 1Article

Microloading effect in highly selective SiO₂ contact hole etching employing inductively coupled plasmaFUKASAWA, T; KUBOTA, K; SHINDO, H et al.Japanese journal of applied physics. 1994, Vol 33, Num 12B, pp 7042-7046, issn 0021-4922, 1Article

Photo-excited etching of poly-crystalline and single-crystalline silicon in Cl₂ atmosphereOKANO, H; HORIIKE, Y; SEKINE, M et al.Japanese journal of applied physics. 1985, Vol 24, Num 1, pp 68-74, issn 0021-4922Article

High rate and highly selective SiO₂ etching employing inductively coupled plasma : Dry processFUKASAWA, T; NAKAMURA, A; SHINDO, H et al.Japanese journal of applied physics. 1994, Vol 33, Num 4B, pp 2139-2144, issn 0021-4922, 1Conference Paper

Diagnostics of hydrogen role in the Si surface reaction processes employing in-situ Fourier transform infrared-attenuated total reflectionKAWAMURA, K; ISHIZUKA, S; SAKAUE, H et al.Japanese journal of applied physics. 1991, Vol 30, Num 11B, pp 3215-3218, issn 0021-4922, 1Article

Filling of Si oxide into a deep trench using digital CVD methodHORIIKE, Y; ICHIHARA, T; SAKAUE, H et al.Applied surface science. 1990, Vol 46, Num 1-4, pp 168-174, issn 0169-4332, 7 p.Conference Paper

Contrast enhancement pattern transfer etching of phosphorus-doped polycrystalline siliconHAYASAKA, N; NAKAHARA, H; OKANO, H et al.Applied physics letters. 1987, Vol 51, Num 17, pp 1328-1330, issn 0003-6951Article

Excimer laser photochemical directional etching of phosphorous doped poly-crystalline siliconSEKINE, M; OKANO, H; HORIIKE, Y et al.Japanese journal of applied physics. 1986, Vol 25, Num 12, pp 1944-1947, issn 0021-4922Article

Etching characteristics of n⁺ poly-Si and Al employing a magnetron plasmaOKANO, H; HORIIKE, Y; YAMAZAKI, T et al.Japanese journal of applied physics. 1984, Vol 23, Num 4, pp 482-486, issn 0021-4922, 1Article

RF selfbias voltage and sheath width in inductively coupled chlorine plasmaSHINDO, H; FUKASAWA, T; NAKAMURA, A et al.Japanese journal of applied physics. 1995, Vol 34, Num 2A, pp 620-622, issn 0021-4922, 1Article

Digital chemical vapor deposition of SiO₂ using a repetitive reaction of triethylsilane/hydrogen and oxidationSAKAUE, H; NAKANO, M; ICHIHARA, T et al.Japanese journal of applied physics. 1991, Vol 30, Num 1B, pp L124-L127, issn 0021-4922, 2Article

Study on reaction mechanism of aluminum selective chemical vapor deposition with in-situ XPS measurementKAWAMOTO, H; SAKAUE, H; TAKEHIRO, S et al.Japanese journal of applied physics. 1990, Vol 29, Num 11, pp 2657-2661, issn 0021-4922, 1Article

High etch rate modes in microwave plasma etching of silicon in high magnetic fieldsSHINDO, H; HASHIMOTO, T; AMASAKI, F et al.Japanese journal of applied physics. 1990, Vol 29, Num 11, pp 2641-2643, issn 0021-4922, 1Article

Downstream etching of Si and SiO₂ employing CF₄/O₂ or NF₃/O₂ at high temperatureNAGATA, A; ICHIHASHI, H; KUSUNOKI, Y et al.Japanese journal of applied physics. 1989, Vol 28, Num 11, pp 2368-2371, issn 0021-4922, 4 p., part 1Article

Highly selective etching of Si₃N₄ to SiO₂ employing fluorine and chlorine atoms generated by microwave dischargeSUTO, S; HAYASAKA, N; OKANO, H et al.Journal of the Electrochemical Society. 1989, Vol 136, Num 7, pp 2032-2034, issn 0013-4651, 3 p.Conference Paper

Photo-assisted anisotropic etching of phosphorus-doped polycrystalline silicon employing reactive species generated by a microwave dischargeHAYASAKA, N; OKANO, H; SEKINE, M et al.Applied physics letters. 1986, Vol 48, Num 17, pp 1165-1166, issn 0003-6951Article

KrF excimer laser projection lithography: 0.35 μm minimum space VLSI pattern fabrication by a tri-level resist processSATO, T; NAKASE, M; NONAKA, M et al.Japanese journal of applied physics. 1988, Vol 27, Num 2, pp 323-327, issn 0021-4922, 1Article

Sputtering of aluminum film using microwave plasma with high magnetic fieldTAKEHIRO, S; YMANKA, N; SHINDO, H et al.Japanese journal of applied physics. 1991, Vol 30, Num 12B, pp 3657-3661, issn 0021-4922, 1Article

Radiation damage evaluation in excimer laser beam irradiation and reactive ion etchingSEKINE, M; OKANO, H; YAMABE, K et al.Japanese journal of applied physics. 1986, Vol 25, Num 7, pp 1111-1114, issn 0021-4922, 1Article

Si etching employing steady-state magnetron plasma with magnet at anode centered in a cylindrical reactorKOTO, M; NARAI, A; SAKAUE, H et al.Japanese journal of applied physics. 1992, Vol 31, Num 12B, pp 4338-4342, issn 0021-4922, 1Article

Compact electron cyclotron resonance plasma-etching reactor employing permanent magnetNARAI, A; HASHIMOTO, T; ICHIHASHI, H et al.Japanese journal of applied physics. 1991, Vol 30, Num 11B, pp 3159-3163, issn 0021-4922, 1Article

Single silicon etching profile simulationARIKADO, T; HORIOKA, K; SEKINE, M et al.Japanese journal of applied physics. 1988, Vol 27, Num 1, pp 95-99, issn 0021-4922, 1Article